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Silicon bipolar NPN power switching transistor 3DK463(3DK011)
Product Detailed
Related Categories:Transistors
1 metal sealing
2 2 gram per piece
3 Short opened or cut-off time
4 great dissipation power
1 The product structure: silicon NPN extension flat type, metal hermetic sealing
2 Characteristics:
2 gram per piece Short opened or cut-off time great dissipation power light weight, small volumn3 standard: national military standard of GB33A-97 Q/FR20101-2001
4 application: widely used in switch circuit, amplifier circuit, etc.
Para name | symbols | data | unit |
collector-base voltage (IE=0) | VCBO | 80 | V |
collector-emitter voltage (IB=0) | VCEO | 80 | V |
Emitter-base voltage (IC=0) | VEBO | 7 | V |
collector DC current | IC | 10 | A |
Total dissipation power TC≤25°C TC>25°C Lower voltage |
Ptot |
50 0.4 |
W
W/°C |
Working temperature | Tj | 150 | °C |
Store temperature | Tstg | -50~175 | °C |
outline dimension
Silicon bipolar NPN power switching transistor 3DK463(3DK011)
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