Silicon bipolar NPN power switch transistor 3DK020

1 metal hermetic sealing 2 19.5 gram per piece 3 Short opened or cut-off time 4 high breakdown voltage& power

1 The product structure: silicon NPN extension flat type, metal hermetic sealing

2 Characteristics:

       19.5 gram per piece       Short opened or cut-off time        high breakdown voltage& power

3 standard: national standard of ΙΙ GB4589.1-89 GB12560-90 Q/FR118-93

4 application:  widely used in power switch circuit, high voltage amplifier circuit, etc. 

Para name	symbols	3DK020E	3DK020F	3DK020G	3DK020H		unit
collector-base voltage (IE=0)	VCBO	300	350	400	450		V
collector-emitter voltage (IB=0)	VCEO	300	3500	400	450		V
Emitter-base voltage (IC=0)	VEBO	5				V
collector DC current	IC	12				A
Base DC current	IB	3				A
Total dissipation power TC≤25°C TC=75°C TC>25°C Lower voltage	Ptot	350 233 2.33				W   W/°C
Working temperature	Tj	175				°C
Store temperature	Tstg	-55~175				°C

outline dimension

Silicon bipolar NPN power switch transistor 3DK020