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aerospace Silicon rectifier diode 2CZ4001~2CZ4007
1 Structure: Silicon diffusion type mesa, Plastic or glass passivation encapsulation
2 Characteristic
Small size, light weight, 0.4 gram weighEntity encapsulation, good sealing ,high reliability Temperature shock resistance,3 standard: national standard of ΙΙGB4589.1-89 GB12560-90Q/FR103-92 Q/FR25-87
4 application: widely used for rectifier circuit in all kinds of electrical appliances, electronic equipments.
model
| Reverse peak voltage VRWM | Rectifier output average current IOa | Positive not repeat surge current IFSM | Work junction temperatue Tj | Store Temperature Tstg |
V | A | A | °C | °C | |
2CZ4001(1N4001) | 50 | 1 | 30 | -40~140 | -40~140 |
2CZ4001(1N4002) | 100 | ||||
2CZ4001(1N4003) | 200 | ||||
2CZ4001(1N4004) | 400 | ||||
2CZ4001(1N4005) | 600 | ||||
2CZ4001(1N4006) | 800 | ||||
2CZ4001(1N4007) | 1000 | ||||
Test condition | resistance load TL≤50°C | IF=1A tp=10ms TA=25°C | |||
a TA>70°C,lower voltage as8.7mA/°C | |||||
Electrical characteristic
Para name | symbols | Test condition | Standard data | unit | |
Min | Max | ||||
reverse current | IR1 | VR=VRWM | — | 10 | μA |
IR2 | VR= VRWM TA=100°C | — | 100 | μA | |
forward voltage | VFa | IF=3A | — | 1.4 | V |
A pulse method: pulse width 300 μ s ≤2% | |||||
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aerospace Silicon rectifier diode 2CZ4001~2CZ4007
