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Silicon rectifier diode 2CZ021

Silicon rectifier diode 2CZ021
Product Detailed
Related Categories:Diodes
1Silicon rectifier diode 2 15 gram per piece& bolt metal sealing& good thermal performance&Large current

1 Structure: Silicon diffusion type mesa

2 Characteristic

15 gram per piece,    Entity encapsulation,  bolt metal  sealing, high reliability     Good thermal performance, temperature shock resistance,     Large current

   

3 standard: national military  standard of GJB33-85 Q/FR20025-93

4 application:  widely used for rectifier circuit in all kinds of electrical appliances, electronic equipments.

model

 

Reverse not Repeat peak voltage

 VRSM

Reverse

peak voltage

VRWM

Rectifier output average current  IOa

Positive not repeat surge current

IFSM

Work junction temperatue

Tj

Store

Temperature

Tstg

V

V

A

A

°C 

°C 

2CZ021 

300 

200

25

160

-40~150

-

40~150

Test condition

TC≤50°C

tP=10ms

TA=25°C

a Tc>80°C,lower voltage as 4.3mA/°C

Electrical characteristic

Para name

symbols

Test condition

Standard data

unit

Min

Max

reverse current

 IR1

VR=200V

5

μA

  IR2

VR=200V TC=150°C

2

mA

forward voltage

   VFa

IF=25A

11.5

V

Thermal resistance

   R(th)j-c

IF=5A t=5s

4

K/W

Pulse method: pulse width 300 μ s, ≤ 2%

Silicon rectifier diode 2CZ021



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