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light weight Silicon rectifier diode
1 Structure: Silicon diffusion type mesa, glass passivation entity encapsulation.
2 Characteristic:
Small volume, light weight, 0.5 gram per piece, Entity encapsulation, good sealing, high reliability Temperature shock resistance3 standard: national standard of ΙΙGB4936.1-85 Q/FR24-87
4 application: widely used for rectifier circuit in all kinds of electrical appliances, electronic equipments.
model
| Reverse not Repeat peak voltage VRSM | Reverse peak voltage VRWM | Rectifier output average current IOa | Positive not repeat surge current IFSM | Work junction temperatue Tj | Store Temperature Tstg | Low air pressure |
V | V | A | A | °C | °C | Pa | |
2CZ101B(BZ03B | 75 | 50 | 0.3 | 6 | -55~150 | -55~175 | __ |
2CZ101C(BZ03C) | 150 | 100 | |||||
2CZ101D(BZ03D) | 300 | 200 | |||||
2CZ101E(BZ03E) | 450 | 300 | 1×103 | ||||
2CZ101F(BZ03F) | 600 | 400 | |||||
2CZ101G(BZ03G) | 750 | 500 | |||||
2CZ101H(BZ03H) | 900 | 600 | |||||
2CZ101J(BZ03J) | 1050 | 700 | 4×103 | ||||
2CZ101K(BZ03K) | 1200 | 800 | |||||
2CZ101L(BZ03L) | 1350 | 900 | |||||
2CZ101M(BZ03M) | 1500 | 1000 | |||||
Test condition | single-phase resistance load 50Hz TL≤80°C | IF= IO tP=10ms TA=25°C | |||||
a TL>80°C,lower voltage as 4.3mA/°C |
light weight Silicon rectifier diode