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Silicon bipolar NPN power switch transistor 3DK4563DK456
Product Detailed
Related Categories:Transistors
1 metal sealing
2 66 gram per piece
3 Short opened or cut-off time
4 small saturation pressure drop
1 The product structure: silicon NPN extension flat type, metal hermetic sealing
2 Characteristics:
66 gram per piece Short opened or cut-off time small saturation pressure drop light weight, small volumn3 standard: national standard of ΙΙ GJB33A-97 Q/FR20115-2002(3DK456)Q/FR20121-2002(3DK456E)
4 application: widely used in switch circuit, amplifier circuit, etc.
Para name | symbols | data | unit |
collector-base voltage (IE=0) | VCBO | 350 | V |
collector-emitter voltage (IB=0) | VCEO | 300 | V |
Emitter-base voltage (IC=0) | VEBO | 12 | V |
collector DC current | IC | 40 | A |
Total dissipation power TC≤25°C TC>25°C Lower voltage |
Ptot |
250 1.67 |
W
W/°C |
Working temperature | Tj | 150 | °C |
Store temperature | Tstg | -65~175 | °C |
outline dimension
Electrical diagram
Silicon bipolar NPN power switch transistor 3DK4563DK456
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