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Silicon bipolar NPN power switch transistor 3DK4563DK456

Silicon bipolar NPN power switch transistor 3DK4563DK456
Product Detailed
Related Categories:Transistors
1 metal sealing 2 66 gram per piece 3 Short opened or cut-off time 4 small saturation pressure drop

1 The product structure: silicon NPN extension flat type, metal hermetic sealing

2 Characteristics:

       66 gram per piece       Short opened or cut-off time       small saturation pressure drop        light weight, small volumn

3 standard: national standard of ΙΙ GJB33A-97 Q/FR20115-2002(3DK456)Q/FR20121-2002(3DK456E)

4 application:  widely used in switch circuit,  amplifier circuit, etc. 

Para name

symbols

data

unit

collector-base voltage (IE=0)

VCBO

350

V

collector-emitter voltage (IB=0)

VCEO

300

V

Emitter-base voltage (IC=0)

VEBO

          12

V

collector DC current

IC

40

A

Total dissipation power

TC≤25°C

TC>25°C Lower voltage

 

Ptot

 

 

250

1.67

 

W

 

W/°C

Working temperature

Tj

150

°C

Store temperature

Tstg

-65~175

°C

outline dimension

Electrical diagram

     

Silicon bipolar NPN power switch transistor 3DK4563DK456



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