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Silicon bipolar NPN power switch transistor 3DK013E
Product Detailed
Related Categories:Transistors
1 metal hermetic sealing
2 20 gram per piece
3 Short opened or cut-off time
4 high breakdown voltage& working current
1 The product structure: silicon NPN extension flat type, metal hermetic sealing
2 Characteristics:
20 gram per piece Short opened or cut-off time high breakdown voltage& working current3 standard: national standard of ΙΙ GB4589.1-89 GB12560-90 Q/FR118-93
4 application: widely used in power switch circuit, high voltage amplifier circuit, etc.
Para name | symbols | data | unit |
collector-base voltage (IE=0) | VCBO | 300 | V |
collector-emitter voltage (IB=0) | VCEO | 250 | V |
Emitter-base voltage (IC=0) | VEBO | 7 | V |
collector DC current | IC | 40 | A |
Base DC current | IB | 8 | A |
Total dissipation power TC≤25°C TC>25°C Lower voltage |
Ptot |
250 1.43 |
W
W/°C |
Working temperature | Tj | 175 | °C |
Store temperature | Tstg | -55~175 | °C |
outline dimension
Silicon bipolar NPN power switch transistor 3DK013E
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