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Silicon bipolar NPN power switch transistor 3DK013E

Silicon bipolar NPN power switch transistor 3DK013E
Product Detailed
Related Categories:Transistors
1 metal hermetic sealing 2 20 gram per piece 3 Short opened or cut-off time 4 high breakdown voltage& working current

1 The product structure: silicon NPN extension flat type, metal hermetic sealing

2 Characteristics:

       20 gram per piece       Short opened or cut-off time        high breakdown voltage& working current

3 standard: national standard of ΙΙ GB4589.1-89 GB12560-90 Q/FR118-93

4 application:  widely used in power switch circuit, high voltage amplifier circuit, etc. 

Para name

symbols

data

unit

collector-base voltage (IE=0)

VCBO

300

V

collector-emitter voltage (IB=0)

VCEO

250

V

Emitter-base voltage (IC=0)

VEBO

                                                       7

V

collector DC current

IC

40

A

Base DC current

IB

8

A

Total dissipation power

TC≤25°C

TC>25°C Lower voltage

 

Ptot

 

250

1.43

 

W

 

W/°C

Working temperature

Tj

175

°C

Store temperature

Tstg

-55~175

°C

outline dimension

Silicon bipolar NPN power switch transistor 3DK013E



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