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Silicon bipolar NPN power switching transistor 3DK023F

Silicon bipolar NPN power switching transistor 3DK023F
Product Detailed
Related Categories:Transistors
1 metal hermetic sealing 2 1 gram per piece 3 Short opened or cut-off time 4 small saturation pressure drop

1 The product structure: silicon NPN extension flat type, metal hermetic sealing

2 Characteristics:

       1 gram per piece       Short opened or cut-off time        small saturation pressure drop

3 standard: national standard of ΙΙ GB4589.1-89 GB12560-90 Q/FR96-91

4 application:  widely used in switch circuit,  amplifier circuit, etc. 

Para name

symbols

data

unit

collector-base voltage (IE=0)

VCBO

250

V

collector-emitter voltage (IB=0)

VCEO

200

V

Emitter-base voltage (IC=0)

VEBO

6

V

collector DC current

IC

1

A

Base DC current

IB

0.5

A

Total dissipation power

TC≤25°C

TC>25°C Lower voltage

 

Ptot

 

1

0.008

 

W

 

W/°C

Working temperature

Tj

150

°C

Store temperature

Tstg

-55~175

°C

outline dimension

Silicon bipolar NPN power switching transistor 3DK023F



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